switchmode series npn silicon power darlington transistors with base-emitter speedup diode the mj10007 darlington transistor is designed for highvoltage, highspeed, power switching in inductive circuits where fall time is critical. it is particularly suited for line operated switchmode applications such as: ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits ? fast turnoff times 30 ns inductive fall time e 25 c (typ) 500 ns inductive storage time e 25 c (typ) operating temperature range 65 to +200 c ? 100 c performance specified for: reversed biased soa with inductive loads switching times with inductive loads saturation voltages leakage currents ????????????????????????????????? ????????????????????????????????? maximum ratings ?????????????????????? ?????????????????????? rating ????? ????? symbol ????? ????? value ???? ???? unit ?????????????????????? ?????????????????????? collectoremitter voltage ????? ????? v ceo ????? ????? 400 ???? ???? vdc ?????????????????????? ?????????????????????? collectoremitter voltage ????? ????? v cex ????? ????? 450 ???? ???? vdc ?????????????????????? ?????????????????????? collectoremitter voltage ????? ????? v cev ????? ????? 500 ???? ???? vdc ?????????????????????? ?????????????????????? emitter base voltage ????? ????? v eb ????? ????? 8.0 ???? ???? vdc ?????????????????????? ?????????????????????? collector current e continuous e peak (1) ????? ????? i c i cm ????? ????? 10 20 ???? ???? adc ?????????????????????? ? ???????????????????? ? ?????????????????????? base current e continuous e peak (1) ????? ? ??? ? ????? i b i bm ????? ? ??? ? ????? 2.5 5.0 ???? ? ?? ? ???? adc ?????????????????????? ? ???????????????????? ? ?????????????????????? total power dissipation @ t c = 25 c @ t c = 100 c derate above 25 c ????? ? ??? ? ????? p d ????? ? ??? ? ????? 150 100 0.86 ???? ? ?? ? ???? watts w/ c ?????????????????????? ?????????????????????? operating and storage junction temperature range ????? ????? t j , t stg ????? ????? 65 to +200 ???? ???? c ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? thermal characteristics ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ????? ????? max ???? ???? unit ?????????????????????? ?????????????????????? thermal resistance, junction to case ????? ????? r q jc ????? ????? 1.17 ???? ???? c/w ?????????????????????? ?????????????????????? maximum lead temperature for soldering purposes 1/8 from case for 5 seconds ????? ????? t l ????? ????? 275 ???? ???? c (1) pulse test: pulse width = 5.0 ms, duty cycle 10%. designer's and switchmode are trademarks of on semiconductor, inc. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 4 1 publication order number: mj10007/d 10 ampere npn silicon power darlington transistors 400 volts 150 watts mj10007 *on semiconductor preferred device case 107 to204aa (to3) * 100 15
mj10007 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (table 1) (i c = 250 ma, i b = 0, v clamp = rated v ceo ) ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 400 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (table 1, figure 12) (i c = 1 a, v clamp = rated v cex , t c = 100 c) (i c = 5 a, v clamp = rated v cex , t c = 100 c) ????? ? ??? ? ????? v cex(sus) ???? ? ?? ? ???? 450 325 ??? ? ? ? ??? e e ???? ? ?? ? ???? e e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collector cutoff current (v cev = rated value, v be(off) = 1 5 vdc) (v cev = rated value, v be(off) = 1.5 vdc, t c = 150 c) ????? ? ??? ? ? ??? ? ????? i cev ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 0.25 5.0 ??? ? ? ? ? ? ? ??? madc ??????????????????? ??????????????????? collector cutoff current (v ce = rated v cev , r be = 50 w , t c = 100 c) ????? ????? i cer ???? ???? e ??? ??? e ???? ???? 5.0 ??? ??? madc ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v eb = 2 vdc, i c = 0) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 175 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? second breakdown ??????????????????? ??????????????????? second breakdown collector current with base forward biased ????? ????? i s/b ??????????? ??????????? see figure 11 ????????????????????????????????? ????????????????????????????????? on characteristics (2) ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (i c = 2.5 adc, v ce = 5.0 vdc) (i c = 5.0 adc, v ce = 5.0 vdc) ????? ? ??? ? ????? h fe ???? ? ?? ? ???? 40 30 ??? ? ? ? ??? e e ???? ? ?? ? ???? 500 300 ??? ? ? ? ??? e ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collector emitter saturation voltage (i c = 5.0 adc, i b = 250 madc) (i c = 10 adc, i b = 1.0 adc) (i c = 5.0 adc, i b = 250 madc, t c = 100 c) ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 1.9 2.9 2.0 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 5.0 adc, i b = 250 madc) (i c = 5.0 adc, i b = 250 madc, t c = 100 c) ????? ? ??? ? ? ??? ? ????? v be(sat) ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 2.5 2.5 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ??????????????????? diode forward voltage (1) (i f = 5.0 adc) ????? ????? v f ???? ???? e ??? ??? 3.0 ???? ???? 5 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ? ????????????????? ? ??????????????????? small signal current gain (i c = 1.0 adc, v ce = 10 vdc, f test = 1.0 mhz) ????? ? ??? ? ????? h fe ???? ? ?? ? ???? 10 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? e ??????????????????? ? ????????????????? ? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0, f test = 100 khz) ????? ? ??? ? ????? c ob ???? ? ?? ? ???? 60 ??? ? ? ? ??? e ???? ? ?? ? ???? 275 ??? ? ? ? ??? pf ????????????????????????????????? ????????????????????????????????? switching characteristics ????????????????????????????????? ????????????????????????????????? resistive load (table 1) ?????? ?????? delay time ?????????????? ?????????????? ????? ????? t d ???? ???? e ??? ??? 0.05 ???? ???? 0.2 ??? ??? m s ?????? ?????? rise time ?????????????? ?????????????? (v cc = 250 vdc, i c = 5.0 a, i b1 = 250 ma v be( ff) =50vdc t =50 m s ????? ????? t r ???? ???? e ??? ??? 0.25 ???? ???? 0.6 ??? ??? m s ?????? ?????? storage time ?????????????? ?????????????? i b1 = 250 ma, v be(off) = 5.0 vdc, t p = 50 m s, duty cycle 2.0%) ????? ????? t s ???? ???? e ??? ??? 0.5 ???? ???? 1.5 ??? ??? m s ?????? ?????? fall time ?????????????? ?????????????? duty cycle 2.0%) ????? ????? t f ???? ???? e ??? ??? 0.06 ???? ???? 0.5 ??? ??? m s ????????????????????????????????? ????????????????????????????????? inductive load clamped (table 1) ?????? ?????? storage time ?????????????? ?????????????? (i c = 5.0 a(pk), v clamp = rated v cex , i b1 = 250 ma, ????? ????? t sv ???? ???? e ??? ??? 0.8 ???? ???? 2.0 ??? ??? m s ?????? ?????? crossover time ?????????????? ?????????????? (i c 5 . 0 a( k) , v clam rated v cex , i b1 250 ma , v be(off) = 5.0 vdc, t c = 100 c) ????? ????? t c ???? ???? e ??? ??? 0.6 ???? ???? 1.5 ??? ??? m s ?????? ?????? storage time ?????????????? ?????????????? (i c = 5.0 a(pk), v clamp = rated v cex , i b1 = 250 ma, ????? ????? t sv ???? ???? e ??? ??? 0.5 ???? ???? e ??? ??? m s ?????? ?????? crossover time ?????????????? ?????????????? (i c 5 . 0 a( k) , v clam rated v cex , i b1 250 ma , v be(off) = 5.0 vdc, t c = 25 c) ????? ????? t c ???? ???? e ??? ??? 0.3 ???? ???? e ??? ??? m s (1) the internal collectortoemitter diode can eliminate the need for an external diode to clamp inductive loads. (1) tests have shown that the forward recovery voltage (v f ) of this diode is comparable to that of typical fast recovery rectifiers. (2) pulse test: pw = 300 m s, duty cycle 2%.
mj10007 http://onsemi.com 3 v be , base-emitter voltage (volts) v ce , collector-emitter voltage (volts) figure 1. dc current gain i c , collector current (amp) 3 0.2 0.3 1 2 3 100 50 figure 2. collector saturation region 3.4 i b , base current (ma) 0.6 10 20 70 100 300 700 1 k 2.6 2.2 1.8 1.4 i c = 0.3 a t j = 25 c 10 a v be , base-emitter voltage (volts) 10 3 10 2 10 1 70 h fe , dc current gain t j = 150 c v ce = 5 v , collector current ( a) i c 10 0 0 +0.2 -0.2 v ce = 250 v t j = 125 c 100 c 25 c 30 20 10 7 0.5 0.7 5 7 figure 3. collector-emitter saturation voltage 2.4 0.1 i c , collector current (amp) 0.4 0.3 0.5 0.7 1 2 5 2 1.6 1.2 0.8 i c /i b = 10 t j = - 55 c 7 3 figure 4. base-emitter voltage 2.8 i c , collector current (amp) 0.8 0.2 0.3 0.5 0.7 2.4 2 1.6 1.2 figure 5. collector cutoff region 0.1 figure 6. output capacitance v r , reverse voltage (volts) 40 12 20 10 0.2 100 60 t j = 25 c c ob 400 200 80 100 200 1000 25 c -55 c 200 300 10 5 a 2.5 a 30 500 200 50 voltage (volts) 10 25 c 150 c 257 310 1 25 c 150 c 25 c t j = - 55 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 5 v 75 c m 10 -1 +0.4 +0.8 +0.6 550 c ob , output capacitance (pf) reverse forward 5 0.1 3 1 v ce(sat) , collector-emitter saturation 0.2 0.1 500 0.5 typical characteristics
mj10007 http://onsemi.com 4 i c(pk) t t 1 t f t i c v ce test circuits circuit values input conditions v ceo(sus) v cex(sus) and inductive switching resistive switching l coil = 10 mh, v cc = 10 v r coil = 0.7 w v clamp = v ceo(sus) l coil = 180 m h r coil = 0.05 w v cc = 20 v f o = 500 khz v clamp = rated v cex value v cc = 250 v r l = 50 w pulse width = 50 m s t 2 time t f clamped v ce or v clamp t f unclamped t 2 20 1 0 pw varied to attain i c = 250 ma 2 inductive test circuit inductive test circuit t 1 adjusted to obtain i c test equipment scope e tektronix 475 or equivalent resistive test circuit output waveforms 1 input 2 r coil l coil v cc v clamp rs = 0.1 w 1n4937 or equivalent tut see above for detailed conditions 1 input 2 r coil l coil v cc v clamp rs = 0.1 w 1n4937 or equivalent tut see above for detailed conditions 1 2 tut r l v cc t 1 l coil (i c pk ) v cc t 2 l coil (i c pk ) v clamp table 1. test conditions for dynamic performance figure 7. inductive switching measurements time t sv t rv t fi t ti 90% v clamp t c 90% i b1 i b 10% i c 2% i c v clamp i c v clamp 10% v clamp 90% i c switching times note in resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. however, for inductive loads which are common to switchmode power supplies and hammer drivers, current and voltage waveforms are not in phase. therefore, separate measurements must be made on each waveform to determine the total switching time. for this reason, the following new terms have been defined. t sv = voltage storage time, 90% i b1 to 10% v clamp t rv = voltage rise time, 1090% v clamp t fi = current fall time, 9010% i c t ti = current tail, 102% i c t c = crossover time, 10% v clamp to 10% i c an enlarged portion of the turnoff waveforms is shown in figure 7 to aid in the visual identity of these terms. for the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from an222. p swt = 1/2 v cc i c (t c ) f in general, t rv + t fi t c . however, at lower test currents this relationship may not be valid. as is common with most switching transistors, resistive switching is specified at 25 c and has become a benchmark for designers. however, for designers of high frequency converter circuits, the user oriented specifications which make this a aswitchmodeo transistor are the inductive switching speeds (t c and t sv ) which are guaranteed at 100 c.
mj10007 http://onsemi.com 5 1 figure 8. turnon time i c , collector current (amp) t, time (s) m 0.1 0.01 0.3 10 0.03 0.1 2 t d t r 0.2 3 0.05 0.07 5 figure 9. turnoff time i c , collector current (amp) t, time (s) m 2 0.07 0.05 v be(off) = 5 v v cc = 250 v i b1 = 250 ma t j = 25 c t f t s 0.3 0.5 v cc = 250 v i b1 = 250 ma t j = 25 c 3 0.1 0.7 0.5 0.2 0.3 0.02 57 1 0.7 0.5 0.3 10 0.1 2 0.2 3 5 7 1 0.7 0.5 0.2 0.7 1 resistive switching performance figure 10. thermal response t, time (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 r(t), effective transient thermal resistance (normalized) 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 500 r q jc = r(t) q jc r q jc = 1.17 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.05 0.1 0.02 0.01 0.3 3.0 30 300
mj10007 http://onsemi.com 6 the safe operating area figures shown in figures 11 and 12 are specified ratings for these devices under the test conditions shown. 20 4.0 figure 11. forward bias safe operating area v ce , collector-emitter voltage (volts) 10 2.0 1.0 0.5 0.1 6.0 10 20 40 400 60 0.02 i c , collector current (amps) t c = 25 c dc 0.2 100 200 350 100 m s 10 m s 10 0 figure 12. reverse bias switching safe operating area v ce , collector-emitter voltage (volts) 8 6 0 500 2 i c , collector current (amp) 4 300 400 100 200 v be(off) = 5 v turn off load line boundary for mj10007 the locus for mj10006 is 50 v less 1.0 ms 5.0 ms mj10007 v be(off) = 2 v v be(off) = 0 v t j 100 c 0.05 5.0 bonding wire limited thermally limited second breakdown limited safe operating area information forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 11 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 11 may be found at any case temperature by using the appropriate curve on figure 13. t j(pk) may be calculated from the data in figure 10. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as v cex(sus) at a given collector current and represents a voltagecurrent condition that can be sustained during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 12 gives the complete reverse bias safe operating area characteristics. 100 80 60 20 0 0 40 80 120 200 figure 13. power derating t c , case temperature ( c) power derating factor (%) thermal derating second breakdown derating 160 40
mj10007 http://onsemi.com 7 package dimensions case 107 issue z to204aa (to3) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h
mj10007 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mj10007/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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